SDN520C n-ch: 4.5 a, 20 v, r ds(on) 58 m ? p-ch: -4.5 a, -20 v, r ds(on) 112 m ? n & p-channel enhancement mode mosfet elektronische bauelemente 4-jul-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to assures minimal power loss and heat dissipat ion. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe dfn2x2_6l saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. absolute maximum ratings( t a = 25 c unless otherwise specified ) parameter symbol ratings unit n-channel p-channel drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 8 v continuous drain current 1 ta=25 i d 4.5 -4.5 a ta=70 4.5 -4.5 pulsed drain current 2 i dm 8 -8 a continuous source current (diode conduction) 1 i s 4.5 -4.5 a power dissipation 1 ta=25 p d 6.5 w ta=70 5 operating junction and storage temperature range t j , tstg -55 ~ +150 thermal resistance rating parameter symbol typ max unit maximum junction to ambient 1 t Q 5 sec r ja 52 65 / w steady state 12.5 16 notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. dfn2x2-6l ref. millimeter ref. millimeter min. typ. max. min. typ. max. a 2.00 bsc. g 0.23 0.30 0.38 b 2.00 bsc. h 0.65bsc - c 0.675 0.75 0.80 j 0 - 0.05 d 0.25 0.30 0.35 k 0.15 0.20 0.25 e 0.81 0.86 0.91 l 0.25 0.30 0.35 f 0.65bsc p 0.60 0.65 0.70 top view
SDN520C n-ch: 4.5 a, 20 v, r ds(on) 58 m ? p-ch: -4.5 a, -20 v, r ds(on) 112 m ? n & p-channel enhancement mode mosfet elektronische bauelemente 4-jul-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics ( t a = 25 c unless otherwise specified ) parameter symbol min. typ. max. unit test conditions gate-threshold voltage n-ch v gs(th) 1 - - v v ds =v gs , i d =250ua p-ch -1 - - v ds =v gs , i d = -250ua gate-body leakage current n-ch i gss - - 100 ua v ds = 0 , v gs = 8 v p-ch - - -100 v ds = 0 , v gs = -8 v zero gate voltage drain current n-ch i dss - - 1 ua v ds =16 v, v gs =0 p-ch - - -1 v ds =-16v, v gs =0 n-ch - - 10 v ds =16v, v gs =0 , t j =55 p-ch - - -10 v ds = -16v, v gs =0 , t j =55 on-state drain current 1 n-ch i d(on) 5 - - a v ds = 5v, v gs =4.5 v p-ch -5 - - v ds = -5v, v gs = -4.5 v drain-source on-resistance 1 n-ch r ds(on) - - 58 m v gs =4.5v, i d = 1a p-ch - - 112 v gs =-4.5v, i d = 1a n-ch - - 82 v gs =2.5v, i d = a p-ch - - 172 v gs =-2.5v, i d = -1a forward transconductance 1 n-ch g fs - 10 - s v ds = 5v, i d = 1a p-ch - 5 - v ds = -5v, i d = 11a diode forward voltage 1 n-ch v sd - 0.80 - s i s = 1.05a, v gs = 0 p-ch - -0.83 - i s = -1.05a, v gs = 0 dynamic 2 total gate charge n-ch q g - 7.5 - nc n-channel v ds =15v, v gs = 4.5v, i d = 2.7a p-channel v ds = -15v, v gs = -4.5v, i d = -3.1a p-ch - 3.8 - gate-source charge n-ch q gs - 0.6 - p-ch - 0.6 - gate-drain charge n-ch q gd - 1.0 - p-ch - 1.5 - turn-on delay time n-ch t d(on) - 5 - ns n-channel v dd = 15v, r gen = 15 , v gs = 4.5v, i d = 1a p-channel v dd = -15v, r gen = 15 v gs = -4.5v, i d = -1a p-ch - 5 - rise time n-ch t r - 12 - p-ch - 15 - turn-off delay time n-ch t d(off) - 13 - p-ch - 20 - fall time n-ch t f - 7 - p-ch - 20 - notes: 1. pulse test: pw <= 300us duty cycle <= 2%. 2. guaranteed by design, not subject to production testing.
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